A Wide-Operating Range Standard-Cell Based Memory in 28nm FD-SOI
- This study presents an energy-efficient ultra-low voltage standard-cell based memory in 28nm FD-SOI. The storage element (standard-cell latch) is replaced with a full- custom designed latch with 50 % less area. Error-free operation is demonstrated down to 450mV @ 9MHz. By utilizing body bias (BB) @ VDD = 0.5 V performance spans from 20 MHz @ BB=0V to 110MHz @ BB=1V.
Author: | Oskar Andersson, Babak Mohammadi, Joachim Neves Rodrigues |
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URN: | urn:nbn:de:hbz:386-kluedo-43308 |
Document Type: | Conference Proceeding |
Language of publication: | English |
Date of Publication (online): | 2016/03/14 |
Year of first Publication: | 2016 |
Publishing Institution: | Technische Universität Kaiserslautern |
Date of the Publication (Server): | 2016/03/14 |
Page Number: | 2 |
Faculties / Organisational entities: | Kaiserslautern - Fachbereich Elektrotechnik und Informationstechnik |
CCS-Classification (computer science): | B. Hardware / B.3 MEMORY STRUCTURES / B.3.0 General |
DDC-Cassification: | 6 Technik, Medizin, angewandte Wissenschaften / 621.3 Elektrotechnik, Elektronik |
Collections: | International Workshop on Emerging Memory Solutions |
Licence (German): | Standard gemäß KLUEDO-Leitlinien vom 30.07.2015 |