Magnetic anisotropies of MBE-grown fcc Co(110)-films on Cu(110) single crystal substrates have been determined by using Brillouin light scattering(BLS) and have been correlated with the structural properties determined by low energy electron diffraction (LEED) and scanning tunneling microscopy (STM). Three regimes of film growth and associated anisotropy behavior are identified: coherent growth in the Co film thickness regime of up to 13 Å, in-plane anisotropic strain relaxation between 13 Å and about 50 Å and inplane isotropic strain relaxation above 50 Å. The structural origin of the transition between anisotropic and isotropic strain relaxation was studied using STM. In the regime of anisotropic strain relaxation long Co stripes with a preferential [ 110 ]-orientation are observed, which in the isotropic strain relaxation regime are interrupted in the perpendicular in-plane direction to form isotropic islands. In the Co film thickness regime below 50 Å an unexpected suppression of the magnetocrystalline anisotropy contribution is observed. A model calculation based on a crystal field formalism and discussed within the context of band theory, which explicitly takes tetragonal misfit strains into account, reproduces the experimentally observed anomalies despite the fact that the thick Co films are quite rough.
Absract: We report on measurements of the two-dimensional intensity distribtion of linear and non-linear spin wave excitations in a LuBiFeO film. The spin wave intensity was detected with a high-resolution Brillouinlight scatteringspectroscopy setup. The observed snake-like structure of the spin wave intensity distribution is understood as a mode beating between modes with different lateral spin wave intensity distributions. The theoretical treatment of the linear regime is performed analytically, whereas the propagation of non-linear spin waves is simulated by a numerical solution of a non-linear Schrödinger equation with suitable boundary conditions.
We report results of the switching properties of Stoner-like magnetic particles subject to short magnetic field pulses, obtained by numerical investigations. We discuss the switching properties as a function of the external field pulse strength and direction, the pulse length and the pulse shape. For field pulses long compared to the ferromagnetic resonance precession time the switching behavior is governed by the magnetic damping term, whereas in the limit of short field pulses the switching properties are dominated by the details of the precession of the magnetic moment. In the latter case, by choosing the right field pulse parameters, the magnetic damping term is of minor importance and ultrafast switching can be achieved. Switching can be obtained in an enlarged angular range of the direction of the applied field compared to the case of long pulses.
FeNi/FeMn exchange bias samples with a large exchange bias field at room temperature have been prepared on a Cu buffer layer. Upon irradiation with He ions, both the exchange bias field and the coercive field are modified. For low ion doses the exchange bias field is enhanced by nearly a factor of 2. Above a threshold dose of 0.3olsi 10 15 ions/cm 2 , the exchange bias field decreases continuously as the ion dose increases. The ob-served modifications are explained in terms of defect creation acting as pinning sites for domain walls and atomic intermixing.
For the next generation of high data rate magnetic recording above 1 Gbit/s, a better understanding of the switching processes for both recording heads and media will be required. In order to maximize the switch-ing speed for such devices, the magnetization precession after the magnetic field pulse termination needs to be suppressed to a maximum degree. It is demonstrated experimentally for ferrite films that the appropriate adjustment of the field pulse parameters and/or the static applied field may lead to a full suppression of the magnetization precession immediately upon termination of the field pulse. The suppression is explained by taking into account the actual direction of the magnetization with respect to the static field direction at the pulse termination.
We report on an unexpected suppression of the magnetocrystalline anisotropy contribution in epitaxial fcc Co(110) films on Cu(110) below a thickness of dc=(50 +/- 10) Å. For film thicknesses larger than dc the measured anisotropy value agrees with published data. Measurements on films with reduced strain indicate a large strain dependence of dc . A model calculation based on a crystal-field formalism and discussed within the context of band theory, which explicitly takes tetragonal misfit strains into account, reproduces the experimen-tally observed anomalies. Our results indicate that the usually applied phenomenological description of anisotropies, assuming additive free energy terms for each anisotropy contribution, fails in this case.
Hexagonal BN films have been deposited by rf-magnetron sputtering with simultaneous ion plating. The elastic properties of the films grown on silicon substrates under identical coating conditions have been de-termined by Brillouin light scattering from thermally excited surface phonons. Four of the five independent elastic constants of the deposited material are found to be c11 = 65 GPa, c13 = 7 GPa, c33 = 92 GPa and c44 = 53 GPa exhibiting an elastic anisotropy c11/c33 of 0.7. The Young's modulus determined with load indentation is distinctly larger than the corresponding value taken from Brillouin light scattering. This discrepancy is attributed to the specific morphology of the material with nanocrystallites embedded in an amorphous matrix.
The magnetic anisotropy of Co/Cu~001! films has been investigated by the magneto-optical Kerr effect, both in the pseudomorphic growth regime and above the critical thickness where strain relaxation sets in. A clear correlation between the onset of strain relaxation as measured by means of reflection high-energy electron diffraction and changes of the magnetic anisotropy has been found.