- In-plane anomalies of the exchange bias field in Ni80Fe20/Fe50Mn50 bilayers on Cu(110) (1998)
- We report on the exchange bias effect as a function of the in-plane direction of the applied field in twofold symmetric, epitaxial Ni 80 Fe 20 /Fe 50 Mn 50 bilayers grown on Cu~110! single-crystal substrates. An enhancement of the exchange bias field, H eb , up to a factor of 2 is observed if the external field is nearly, but not fully aligned perpendicular to the symmetry direction of the exchange bias field. From the measurement of the exchange bias field as a function of the in-plane angle of the applied field, the unidirectional, uniaxial and fourfold anisotropy contributions are determined with high precision. The symmetry direction of the unidirectional anisotropy switches with increasing NiFe thickness from  to .
- Brillouin light scattering investigations of exchange biased (110)-oriented NiFe/FeMn bilayers (1997)
- All contributing magnetic anisotropies in (110)-oriented exchange biased Ni 80 Fe 20 /Fe 50 Mn 50 double layers prepared by molecular beam epitaxy on Cu(110) single crystals have been determined by means of Brillouin light scattering. Upon covering the Ni 80 Fe 20 films by Fe 50 Mn 50 , a unidirectional anisotropy contribution appears, which is consistent with the measured exchange bias field. The uniaxial and fourfold in-plane anisotropy contributions are largely modified by an amount, which scales with the Ni 80 Fe 20 thickness, indicating an interface effect. The strong uniaxial anisotropy contribution shows an in-plane switching of the easy axis from  to  with increasing Ni 80 Fe 20 -layer thickness. The large mode width of the spin wave excitations, which exceeds the linewidth of uncovered Ni 80 Fe 20 films by a factor of more than six, indicates large spatial variations of the exchange coupling constant. (C) 1998 American Institute of Physics.
- Correlation between structure and magnetic anisotropies of Co on Cu(110) (1999)
- Magnetic anisotropies of MBE-grown fcc Co(110)-films on Cu(110) single crystal substrates have been determined by using Brillouin light scattering(BLS) and have been correlated with the structural properties determined by low energy electron diffraction (LEED) and scanning tunneling microscopy (STM). Three regimes of film growth and associated anisotropy behavior are identified: coherent growth in the Co film thickness regime of up to 13 Å, in-plane anisotropic strain relaxation between 13 Å and about 50 Å and inplane isotropic strain relaxation above 50 Å. The structural origin of the transition between anisotropic and isotropic strain relaxation was studied using STM. In the regime of anisotropic strain relaxation long Co stripes with a preferential [ 110 ]-orientation are observed, which in the isotropic strain relaxation regime are interrupted in the perpendicular in-plane direction to form isotropic islands. In the Co film thickness regime below 50 Å an unexpected suppression of the magnetocrystalline anisotropy contribution is observed. A model calculation based on a crystal field formalism and discussed within the context of band theory, which explicitly takes tetragonal misfit strains into account, reproduces the experimentally observed anomalies despite the fact that the thick Co films are quite rough.