The capacity of embedded memory on LSIs has kept increasing. It is important to reduce the leakage power of embedded memory for low-power LSIs. In fact, the ITRS predicts that the leakage power in embedded memory will account for 40% of all power consumption by 2024 . A spin transfer torque magneto-resistance random access memory (STT-MRAM) is promising for use as non-volatile memory to reduce the leakage power. It is useful because it can function at low voltages and has a lifetime of over 1016 write cycles . In addition, the STT-MRAM technology has a smaller bit cell than an SRAM. Making the STT-MRAM is suitable for use in high-density products [3–7]. The STT-MRAM uses magnetic tunnel junction (MTJ). The MTJ has two states: a parallel state and an anti-parallel state. These states mean that the magnetization direction of the MTJ’s layers are the same or different. The directions pair determines the MTJ’s magneto- resistance value. The states of MTJ can be changed by the current flowing. The MTJ resistance becomes low in the parallel state and high in the anti-parallel state. The MTJ potentially operates at less than 0.4 V . In other hands, it is difficult to design peripheral circuitry for an STT-MRAM array at such a low voltage. In this paper, we propose a counter-based read circuit that functions at 0.4 V, which is tolerant of process variation and temperature fluctuation.
Magnetic spin-based memory technologies are a promising solution to overcome the incoming limits of microelectronics. Nevertheless, the long write latency and high write energy of these memory technologies compared to SRAM make it difficult to use these for fast microprocessor memories, such as L1- Caches. However, the recent advent of the Spin Orbit Torque (SOT) technology changed the story: indeed, it potentially offers a writing speed comparable to SRAM with a much better density as SRAM and an infinite endurance, paving the way to a new paradigm in processor architectures, with introduction of non- volatility in all the levels of the memory hierarchy towards full normally-off and instant-on processors. This paper presents a full design flow, from device to system, allowing to evaluate the potential of SOT for microprocessor cache memories and very encouraging simulation results using this framework.
Emerging Memories (EMs) could benefit from Error Correcting Codes (ECCs) able to correct few errors in a few nanoseconds. The low latency is necessary to meet the DRAM- like and/or eXecuted-in-Place requirements of Storage Class Memory devices. The error correction capability would help manufacturers to cope with unknown failure mechanisms and to fulfill the market demand for a rapid increase in density. This paper shows the design of an ECC decoder for a shortened BCH code with 256-data-bit page able to correct three errors in less than 3 ns. The tight latency constraint is met by pre-computing the coefficients of carefully chosen Error Locator Polynomials, by optimizing the operations in the Galois Fields and by resorting to a fully parallel combinatorial implementation of the decoder. The latency and the area occupancy are first estimated by the number of elementary gates to traverse, and by the total number of elementary gates of the decoder. Eventually, the implementation of the solution by Synopsys topographical synthesis methodology in 54nm logic gate length CMOS technology gives a latency lower than 3 ns and a total area less than \(250 \cdot 10^3 \mu m^2\).
To continue reducing voltage in scaled technologies, both circuit and architecture-level resiliency techniques are needed to tolerate process-induced defects, variation, and aging in SRAM cells. Many different resiliency schemes have been proposed and evaluated, but most prior results focus on voltage reduction instead of energy reduction. At the circuit level, device cell architectures and assist techniques have been shown to lower Vmin for SRAM, while at the architecture level, redundancy and cache disable techniques have been used to improve resiliency at low voltages. This paper presents a unified study of error tolerance for both circuit and architecture techniques and estimates their area and energy overheads. Optimal techniques are selected by evaluating both the error-correcting abilities at low supplies and the overheads of each technique in a 28nm. The results can be applied to many of the emerging memory technologies.
We investigate the long-term behaviour of diffusions on the non-negative real numbers under killing at some random time. Killing can occur at zero as well as in the interior of the state space. The diffusion follows a stochastic differential equation driven by a Brownian motion. The diffusions we are working with will almost surely be killed. In large parts of this thesis we only assume the drift coefficient to be continuous. Further, we suppose that zero is regular and that infinity is natural. We condition the diffusion on survival up to time t and let t tend to infinity looking for a limiting behaviour.
In DS-CDMA, spreading sequences are allocated to users to separate different
links namely, the base-station to user in the downlink or the user to base station in the uplink. These sequences are designed for optimum periodic correlation properties. Sequences with good periodic auto-correlation properties help in frame synchronisation at the receiver while sequences with good periodic cross-
correlation property reduce cross-talk among users and hence reduce the interference among them. In addition, they are designed to have reduced implementation complexity so that they are easy to generate. In current systems, spreading sequences are allocated to users irrespective of their channel condition. In this thesis,
the method of allocating spreading sequences based on users’ channel condition
is investigated in order to improve the performance of the downlink. Different
methods of dynamically allocating the sequences are investigated including; optimum allocation through a simulation model, fast sub-optimum allocation through
a mathematical model, and a proof-of-concept model using real-world channel
measurements. Each model is evaluated to validate, improvements in the gain
achieved per link, computational complexity of the allocation scheme, and its impact on the capacity of the network.
In cryptography, secret keys are used to ensure confidentiality of communication between the legitimate nodes of a network. In a wireless ad-hoc network, the
broadcast nature of the channel necessitates robust key management systems for
secure functioning of the network. Physical layer security is a novel method of
profitably utilising the random and reciprocal variations of the wireless channel to
extract secret key. By measuring the characteristics of the wireless channel within
its coherence time, reciprocal variations of the channel can be observed between
a pair of nodes. Using these reciprocal characteristics of
common shared secret key is extracted between a pair of the nodes. The process
of key extraction consists of four steps namely; channel measurement, quantisation, information reconciliation, and privacy amplification. The reciprocal channel
variations are measured and quantised to obtain a preliminary key of vector bits (0; 1). Due to errors in measurement, quantisation, and additive Gaussian noise,
disagreement in the bits of preliminary keys exists. These errors are corrected
by using, error detection and correction methods to obtain a synchronised key at
both the nodes. Further, by the method of secure hashing, the entropy of the key
is enhanced in the privacy amplification stage. The efficiency of the key generation process depends on the method of channel measurement and quantisation.
Instead of quantising the channel measurements directly, if their reciprocity is enhanced and then quantised appropriately, the key generation process can be made efficient and fast. In this thesis, four methods of enhancing reciprocity are presented namely; l1-norm minimisation, Hierarchical clustering, Kalman filtering,
and Polynomial regression. They are appropriately quantised by binary and adaptive quantisation. Then, the entire process of key generation, from measuring the channel profile to obtaining a secure key is validated by using real-world channel measurements. The performance evaluation is done by comparing their performance in terms of bit disagreement rate, key generation rate, test of randomness,
robustness test, and eavesdropper test. An architecture, KeyBunch, for effectively
deploying the physical layer security in mobile and vehicular ad-hoc networks is
also proposed. Finally, as an use-case, KeyBunch is deployed in a secure vehicular communication architecture, to highlight the advantages offered by physical layer security.
For the prediction of digging forces from a granular material simulation, the
Nonsmooth Contact Dynamics Method is examined. First, the equations of motion
for nonsmooth mechanical systems are laid out. They are a differential
variational inequality that has the same structure as classical discrete algebraic equations. Using a Galerkin projection in time, it becomes possible to derive
nonsmooth versions of the classical SHAK and RATTLE integrators.
A matrix-free Interior Point Method is used for the complementarity
problems that need to be solved in every time step. It is shown that this method
outperforms the Projected Gauss-Jacobi method by several orders of magnitude
and produces the same digging force result as the Discrete Element Method in comparable computing time.
In this paper, we show the feasibility of low supply voltage for SRAM (Static Random Access Memory) by adding error correction coding (ECC). In SRAM, the memory matrix needs to be powered for data retentive standby operation, resulting in standby leakage current. Particularly for low duty- cycle systems, the energy consumed due to standby leakage current can become significant. Lowering the supply voltage (VDD) during standby mode to below the specified data retention voltage (DRV) helps decrease the leakage current. At these VDD levels errors start to appear, which we can remedy by adding ECC. We show in this paper that addition of a simple single error correcting (SEC) ECC enables us to decrease the leakage current by 45% and leakage power by 72%. We verify this on a large set of commercially available standard 40nm SRAMs.
We consider the problem to evacuate several regions due to river flooding, where sufficient time is given to plan ahead. To ensure a smooth evacuation procedure, our model includes the decision which regions to assign to which shelter, and when evacuation orders should be issued, such that roads do not become congested.
Due to uncertainty in weather forecast, several possible scenarios are simultaneously considered in a robust optimization framework. To solve the resulting integer program, we apply a Tabu search algorithm based on decomposing the problem into better tractable subproblems. Computational experiments on random instances and an instance based on Kulmbach, Germany, data show considerable improvement compared to an MIP solver provided with a strong starting solution.
We present a new approach to handle uncertain combinatorial optimization problems that uses solution ranking procedures to determine the degree of robustness of a solution. Unlike classic concepts for robust optimization, our approach is not purely based on absolute quantitative performance, but also includes qualitative aspects that are of major importance for the decision maker.
We discuss the two variants, solution ranking and objective ranking robustness, in more detail, presenting problem complexities and solution approaches. Using an uncertain shortest path problem as a computational example, the potential of our approach is demonstrated in the context of evacuation planning due to river flooding.