FeNi/FeMn exchange bias samples with a large exchange bias field at room temperature have been prepared on a Cu buffer layer. Upon irradiation with He ions, both the exchange bias field and the coercive field are modified. For low ion doses the exchange bias field is enhanced by nearly a factor of 2. Above a threshold dose of 0.3olsi 10 15 ions/cm 2 , the exchange bias field decreases continuously as the ion dose increases. The ob-served modifications are explained in terms of defect creation acting as pinning sites for domain walls and atomic intermixing.
For the next generation of high data rate magnetic recording above 1 Gbit/s, a better understanding of the switching processes for both recording heads and media will be required. In order to maximize the switch-ing speed for such devices, the magnetization precession after the magnetic field pulse termination needs to be suppressed to a maximum degree. It is demonstrated experimentally for ferrite films that the appropriate adjustment of the field pulse parameters and/or the static applied field may lead to a full suppression of the magnetization precession immediately upon termination of the field pulse. The suppression is explained by taking into account the actual direction of the magnetization with respect to the static field direction at the pulse termination.
We report on an unexpected suppression of the magnetocrystalline anisotropy contribution in epitaxial fcc Co(110) films on Cu(110) below a thickness of dc=(50 +/- 10) Å. For film thicknesses larger than dc the measured anisotropy value agrees with published data. Measurements on films with reduced strain indicate a large strain dependence of dc . A model calculation based on a crystal-field formalism and discussed within the context of band theory, which explicitly takes tetragonal misfit strains into account, reproduces the experimen-tally observed anomalies. Our results indicate that the usually applied phenomenological description of anisotropies, assuming additive free energy terms for each anisotropy contribution, fails in this case.
Hexagonal BN films have been deposited by rf-magnetron sputtering with simultaneous ion plating. The elastic properties of the films grown on silicon substrates under identical coating conditions have been de-termined by Brillouin light scattering from thermally excited surface phonons. Four of the five independent elastic constants of the deposited material are found to be c11 = 65 GPa, c13 = 7 GPa, c33 = 92 GPa and c44 = 53 GPa exhibiting an elastic anisotropy c11/c33 of 0.7. The Young's modulus determined with load indentation is distinctly larger than the corresponding value taken from Brillouin light scattering. This discrepancy is attributed to the specific morphology of the material with nanocrystallites embedded in an amorphous matrix.
The magnetic anisotropy of Co/Cu~001! films has been investigated by the magneto-optical Kerr effect, both in the pseudomorphic growth regime and above the critical thickness where strain relaxation sets in. A clear correlation between the onset of strain relaxation as measured by means of reflection high-energy electron diffraction and changes of the magnetic anisotropy has been found.
The first observation of spatiotemporal self-focusing of spin waves is reported. The experimental results are obtained for dipolar spin waves in yttrium-iron-garnet films by means of a newly developed space- and time-resolved Brillouin light scattering technique. They demonstrate self-focusing of a moving wave pulse in two spatial dimensions, and formation of localized two-dimensional wave packets, the collapse of which is stopped by dissipation. The experimental results are in good qualitative agreement with numerical simulations.
We report on the exchange bias effect as a function of the in-plane direction of the applied field in twofold symmetric, epitaxial Ni 80 Fe 20 /Fe 50 Mn 50 bilayers grown on Cu~110! single-crystal substrates. An enhancement of the exchange bias field, H eb , up to a factor of 2 is observed if the external field is nearly, but not fully aligned perpendicular to the symmetry direction of the exchange bias field. From the measurement of the exchange bias field as a function of the in-plane angle of the applied field, the unidirectional, uniaxial and fourfold anisotropy contributions are determined with high precision. The symmetry direction of the unidirectional anisotropy switches with increasing NiFe thickness from  to .