Kaiserslautern - Fachbereich Physik
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Using molecular dynamics simulation, we study the cutting of an Fe single crystal using
tools with various rake angles α. We focus on the (110)[001] cut system, since here, the crystal
plasticity is governed by a simple mechanism for not too strongly negative rake angles. In this
case, the evolution of the chip is driven by the generation of edge dislocations with the Burgers
vector b = 1
2
[111], such that a fixed shear angle of φ = 54.7◦
is established. It is independent of
the rake angle of the tool. The chip form is rectangular, and the chip thickness agrees with the
theoretical result calculated for this shear angle from the law of mass conservation. We find that the
force angle χ between the direction of the force and the cutting direction is independent of the rake
angle; however, it does not obey the predictions of macroscopic cutting theories, nor the correlations
observed in experiments of (polycrystalline) cutting of mild steel. Only for (strongly) negative rake
angles, the mechanism of plasticity changes, leading to a complex chip shape or even suppressing the
formation of a chip. In these cases, the force angle strongly increases while the friction angle tends
to zero.
Using molecular dynamics simulation, we study nanoindentation in large samples of Cu–Zr glass at various temperatures between zero and the glass transition temperature. We find that besides the elastic modulus, the yielding point also strongly (by around 50%) decreases with increasing temperature; this behavior is in qualitative agreement with predictions of the cooperative shear model. Shear-transformation zones (STZs) show up in increasing sizes at low temperatures, leading to shear-band activity. Cluster analysis of the STZs exhibits a power-law behavior in the statistics of STZ sizes. We find strong plastic activity also during the unloading phase; it shows up both in the deactivation of previous plastic zones and the appearance of new zones, leading to the observation of pop-outs. The statistics of STZs occurring during unloading show that they operate in a similar nature as the STZs found during loading. For both cases, loading and unloading, we find the statistics of STZs to be related to directed percolation. Material hardness shows a weak strain-rate dependence, confirming previously reported experimental findings; the number of pop-ins is reduced at slower indentation rate. Analysis of the dependence of our simulation results on the quench rate applied during preparation of the glass shows only a minor effect on the properties of STZs.
Plasticity in metallic glasses depends on their stoichiometry. We explore this dependence by molecular dynamics simulations for the case of CuZr alloys using the compositions Cu64.5Zr35.5, Cu50Zr50, and Cu35.5Zr64.5. Plasticity is induced by nanoindentation and orthogonal cutting. Only the Cu64.5Zr35.5 sample shows the formation of localized strain in the form of shear bands, while plasticity is more homogeneous for the other samples. This feature concurs with the high fraction of full icosahedral short-range order found for Cu64.5Zr35.5. In all samples, the atomic density is reduced in the plastic zone; this reduction is accompanied by a decrease of the average atom coordination, with the possible exception of Cu35.5Zr64.5, where coordination fluctuations are high. The strongest density reduction occurs in Cu64.5Zr35.5, where it is connected with the partial destruction of full icosahedral short-range order. The difference in plasticity mechanism influences the shape of the pileup and of the chip generated by nanoindentation and cutting, respectively.
Cutting of metallic glasses produces as a rule serrated and segmented chips in experiments, while atomistic simulations produce straight unserrated chips. We demonstrate here that with increasing depth of cut – with all other parameters unchanged – chip serration starts to affect the morphology of the chip also in molecular dynamics simulations. The underlying reason is the shear localization in shear bands. As the distance between shear bands increases with increasing depth of cut, the surface morphology of the chip becomes increasingly segmented. The parallel shear bands that formed during cutting do no longer interact with each other when their separation is ≳10 nm. Our results are analogous to the so-called fold instability that has been found when machining nanocrystalline metals.
The first observation of self-focusing of dipolar spin waves in garnet film media is reported. In particular, we show that the quasi-stationary diffraction of a finite-aperture spin wave beam in a focusing medium leads to the concentration of the wave power in one focal point rather than along a certain line (channel). The obtained results demonstrate the wide applicability of non-linear spin wave media to study non-linear wave phenomena using an advanced combined microwave-Brillouin light scattering technique for a two-dimensional mapping of the spin wave amplitudes.
This contribution presents the results of a replication study on the learning effect of tablet-supported video analysis compared to traditional teaching sequences using non-digital experimental materials in the subject areas of uniform and accelerated motion in high school physics lessons. In addition to the replication of the preliminary study results recently published in this journal (Becker et al 2018, 2019), the investigation of the effect on the cognitive load as well as the emotional state of the students is another focal point. Compared to the preliminary study, the sample size was significantly increased from N = 109 to N = 294. The individual effects of the preliminary study could be replicated in this way. For both topics, a significant reduction of extraneous cognitive load and a positive effect on intervention-induced emotions could be demonstrated. Moreover, the theoretically founded causal relationship between emotion, cognitive load, and learning achievement could be empirically verified by means of structural equation modeling.
With the transition of fluid-capillary-based “Lab on a chip 1.0″ concepts in analytical chemistry to “Lab on a chip
2.0″ approaches relying on distinct fluid droplets (“digital microfluidics”, DMF), the need for reliable methods for
droplet actuation has increasingly come into focus. One possible approach is based on “electrowetting on
dielectric” (EWOD). This technique has the disadvantage that any possible desired later positions of the droplets
on the chip have to be defined prior to chip realization because one of the EWOD electrode layers has to be
structured accordingly. “Optoelectrowetting” (OEW) goes a step further in the sense that the later droplet positions
do not have to be known before, and none of the electrode layers has to be structured. Instead, the
electrical parameters of the layer sequence can be altered locally by an impinging (and movable) light spot.
Although some research groups have succeeded in demonstrating OEW actuation of droplets, the optimization of
the relevant parameters of the layer sequence and the droplet – at least half a dozen parameters altogether – is
tedious and not straight-forward. In this contribution, for optimization purposes, the equations governing OEW
are revisited and altered again, e.g., by numerical implementation of the experimentally well-known saturation
of the contact angle change. Additionally, a Nelder-Mead algorithm is applied to find the parameters, on which
the optimization has to focus to maximize contact angle changes and, thus, mechanical forces on the droplets.
The numerical investigation yields diverse results, e.g., the finding that the droplet’s contact area on the
dielectric layer has a strong influence on the contact angle change and the question whether the droplet is pulled
or pushed. Moreover, the interplay between frequency and amplitude of the applied rectangular alternate voltage
is important for optimization.
Low damping magnetic properties and perpendicular magnetic anisotropy in the Heusler alloy Fe1.5CoGe
(2019)
We present a study of the dynamic magnetic properties of TiN-buffered epitaxial thin films of the Heusler alloy Fe1.5CoGe. Thickness series annealed at different temperatures are prepared and the magnetic damping is measured, a lowest value of α = 2.18 × 10−3 is obtained. The perpendicular magnetic anisotropy properties in Fe1.5CoGe/MgO are also characterized. The evolution of the interfacial perpendicular anisotropy constant K⊥S with the annealing temperature is shown and compared with the widely used CoFeB/MgO interface. A large volume contribution to the perpendicular anisotropy of (4.3 ± 0.5) × 105 J/m3 is also found, in contrast with vanishing bulk contribution in common Co- and Fe-based Heusler alloys.
An unusual interlayer coupling, recently discovered in layered magnetic systems, is analysed from the experimental and theoretical points of view. This coupling favours the 90° orientation of the magnetization of the adjacent magnetic films. It can be phenomenologically described by a term in the energy expression, which is biquadratic with respect to the magnetizations of the two films. The main experimental findings, as well as the theoretical models, explaining the phenomenon are discussed.
A measurement technique, i.e. reflectance anisotropy/difference spectroscopy (RAS/RDS), which had originally been developed for in-situ
epitaxial growth control, is employed here for in-situ real-time etch-depth control during reactive ion etching (RIE) of cubic crystalline III/V
semiconductor samples. Temporal optical Fabry-Perot oscillations of the genuine RAS signal (or of the average reflectivity) during etching due
to the ever shrinking layer thicknesses are used to monitor the current etch depth. This way the achievable in-situ etch-depth resolution has
been around 15 nm. To improve etch-depth control even further, i.e. down to below 5 nm, we now use the optical equivalent of a mechanical
vernier scale– by employing Fabry-Perot oscillations at two different wavelengths or photon energies of the RAS measurement light – 5%
apart, which gives a vernier scale resolution of 5%. For the AlGaAs(Sb) material system a 5 nm resolution is an improvement by a factor of 3
and amounts to a precision in in-situ etch-depth control of around 8 lattice constants.