Kaiserslautern - Fachbereich Elektrotechnik und Informationstechnik
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Users privacy is more and more relevant in today digital world. In this paper, we study how mobile network operators (MNOs) practices can lead to loss of privacy for mobile phone subscribers. This article focuses on the mobile phone service providers' implication in privacy violation. Network attacks from other agents, such as cyber-criminals, are not covered in this work.
We review the impact of the location tracking improvement from 2G to 5G networks on police investigations and users' privacy rights.
We also study the role of MNOs in users' sensitive data monetization and the legality behind this practice.
There are few existing publications aiming to enhance mobile phone users' privacy protection against mobile broadband internet providers. We have tried to list all of them in this article.
The Power and Energy Student Summit (PESS) is designed for students, young professionals and PhD-students in the field of power engineering. PESS offers the possibility to gain first experience in presentation, publication and discussion with a renowned audience of specialists. Therefore, the conference is accompanied and supervised by established scientists and experts. The venue changes every year. In 2018, the University of Kaiserslautern held the eighth PESS conference. This document presents the submissions of this conference.
Autonomous driving is disrupting the conventional automotive development. In fact, autonomous driving kicks off the consolidation of control units, i.e. the transition from distributed Electronic Control Units (ECUs) to centralized domain controllers. Platforms like Audi’s zFAS demonstrate this very clearly, where GPUs, Custom SoCs, Microcontrollers, and FPGAs are integrated on a single domain controller in order to perform sensor fusion, processing and decision making on a single Printed Circuit Board (PCB). The communication between these heterogeneous components and the algorithms for Advanced Driving Assistant Systems (ADAS) itself requires a huge amount of memory bandwidth, which will bring the Memory Wall from High Performance Computing (HPC) and data-centers directly in our cars. In this paper we highlight the roles and issues of Dynamic Random Access Memories (DRAMs) for future autonomous driving architectures.
The authors explore the intrinsic trade-off in a DRAM between the power consumption (due to refresh) and the reliability. Their unique measurement platform allows tailoring to the design constraints depending on whether power consumption, performance or reliability has the highest design priority. Furthermore, the authors show how this measurement platform can be used for reverse engineering the internal structure of DRAMs and how this knowledge can be used to improve DRAM’s reliability.
Memory accesses are the bottleneck of modern computer systems both in terms of performance and energy. This barrier, known as "the Memory Wall", can be break by utilizing memristors. Memristors are novel passive electrical components with varying resistance based on the charge passing through the device [1]. In this abstract, the term "memristor" covers also an extension of the definition, memristive devices, which vary their resistance depending on a state variable [2]. While memristors are naturally used as memory cells, they can also be used for other applications, such as logic circuits [3].
We present a novel architecture that redefines the relationship between the memory and the processor by enabling data processing within the memory itself. Our architecture is based on a memristive memory array, in which we perform two basic logic operations: Imply (material implication) [4] and False.
This study presents an energy-efficient ultra-low voltage standard-cell based memory in 28nm FD-SOI. The storage element (standard-cell latch) is replaced with a full- custom designed latch with 50 % less area. Error-free operation is demonstrated down to 450mV @ 9MHz. By utilizing body bias (BB) @ VDD = 0.5 V performance spans from 20 MHz @ BB=0V to 110MHz @ BB=1V.
Lowering the supply voltage of Static Random-Access Memories (SRAM) is key to reduce power consumption, however since this badly affects the circuit performances, it might lead to various forms of loss of functionality. In this work, we present silicon results showing significant yield improvement, achieved with write and read assist techniques on a 6T high- density bitcell manufactured in 40 nm technology. Data is successfully modeled with an original spice-based method that allows reproducing at high computing efficiency the effects of static negative bitline write assist, the effects of static wordline underdrive read assist, while the effects of read ability losses due to low-voltage operations on the yield are not taken into account in the model.
The energy efficiency of today’s microcontrollers is supported by the extensive usage of low-power mechanisms. A full power-down requires in many cases a complex, and maybe error prone, administration scheme, because data from the volatile memory have to be stored in a flash based back- up memory. New types of non-volatile memory, e.g. in RRAM technology, are faster and consumes a fraction of the energy compared to flash technology. This paper evaluates power gating for WSN with RRAM as back-up memory.
Three-dimensional (3D) integration using through- silicon via (TSV) has been used for memory designs. Content addressable memory (CAM) is an important component in digital systems. In this paper, we propose an evaluation tool for 3D CAMs, which can aid the designer to explore the delay and power of various partitioning strategies. Delay, power, and energy models of 3D CAM with respect to different architectures are built as well.
This paper briefly discusses a new architecture, Computation-In-Memory (CIM Architecture), which performs “processing-in-memory”. It is based on the integration of storage and computation in the same physical location (crossbar topology) and the use of non-volatile resistive-switching technology (memristive devices or memristors in short) instead of CMOS technology. The architecture has the potential of improving the energy-delay product, computing efficiency and performance area by at least two orders of magnitude.