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Using molecular dynamics simulation, we study the cutting of an Fe single crystal using
tools with various rake angles α. We focus on the (110)[001] cut system, since here, the crystal
plasticity is governed by a simple mechanism for not too strongly negative rake angles. In this
case, the evolution of the chip is driven by the generation of edge dislocations with the Burgers
vector b = 1
2
[111], such that a fixed shear angle of φ = 54.7◦
is established. It is independent of
the rake angle of the tool. The chip form is rectangular, and the chip thickness agrees with the
theoretical result calculated for this shear angle from the law of mass conservation. We find that the
force angle χ between the direction of the force and the cutting direction is independent of the rake
angle; however, it does not obey the predictions of macroscopic cutting theories, nor the correlations
observed in experiments of (polycrystalline) cutting of mild steel. Only for (strongly) negative rake
angles, the mechanism of plasticity changes, leading to a complex chip shape or even suppressing the
formation of a chip. In these cases, the force angle strongly increases while the friction angle tends
to zero.
Using the molecular dynamics simulation, we study the cutting of Al/Si bilayer systems. While the plasticity of metals is dominated by dislocation activity, the deformation behavior of Si crystals is governed by phase transformations—here to the amorphous phase. We find that twinning adds as a major deformation mechanism in the cutting of Al crystals. Cutting of Si crystals requires thrust forces that are larger than the cutting forces in order to induce amorphization; in metals, the thrust forces are relatively smaller than the cutting forces. When putting an Al top layer on a Si substrate, the thrust force is reduced; the opposite effect is observed if a Si top layer is put on an Al substrate. Covering an Al substrate with a thin Si top layer has the detrimental effect that the hard Si requires high pressures for cutting; as a consequence, twinning planes with intersecting directions are generated that ultimately lead to cracks in the ductile Al substrate. The crystallinity of the Si chip is strongly changed if an Al substrate is put under the Si top layer: With decreasing thickness of the Si top layer, the Si chip retains a higher degree of crystallinity.