Modification of the exchange bias effect by He ion irradiation
- FeNi/FeMn exchange bias samples with a large exchange bias field at room temperature have been prepared on a Cu buffer layer. Upon irradiation with He ions, both the exchange bias field and the coercive field are modified. For low ion doses the exchange bias field is enhanced by nearly a factor of 2. Above a threshold dose of 0.3olsi 10 15 ions/cm 2 , the exchange bias field decreases continuously as the ion dose increases. The ob-served modifications are explained in terms of defect creation acting as pinning sites for domain walls and atomic intermixing.
Author: | A Mougin, Tim Mewes, Radek Lopusnik, M. Jung, D. Engel, A. Ehresmann, H. Schmoranzer, J. Fassbender, Burkard Hillebrands |
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URN: | urn:nbn:de:hbz:386-kluedo-9431 |
Document Type: | Preprint |
Language of publication: | English |
Year of Completion: | 2000 |
Year of first Publication: | 2000 |
Publishing Institution: | Technische Universität Kaiserslautern |
Date of the Publication (Server): | 2000/02/18 |
Faculties / Organisational entities: | Kaiserslautern - Fachbereich Physik |
DDC-Cassification: | 5 Naturwissenschaften und Mathematik / 530 Physik |
Licence (German): | Standard gemäß KLUEDO-Leitlinien vor dem 27.05.2011 |