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Enabling Low Leakage SRAM Memories at system level: A case study

  • In this paper, we show the feasibility of low supply voltage for SRAM (Static Random Access Memory) by adding error correction coding (ECC). In SRAM, the memory matrix needs to be powered for data retentive standby operation, resulting in standby leakage current. Particularly for low duty- cycle systems, the energy consumed due to standby leakage current can become significant. Lowering the supply voltage (VDD) during standby mode to below the specified data retention voltage (DRV) helps decrease the leakage current. At these VDD levels errors start to appear, which we can remedy by adding ECC. We show in this paper that addition of a simple single error correcting (SEC) ECC enables us to decrease the leakage current by 45% and leakage power by 72%. We verify this on a large set of commercially available standard 40nm SRAMs.

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Metadaten
Author:Nur Engin, Ajay Kapoor
URN (permanent link):urn:nbn:de:hbz:386-kluedo-43040
Parent Title (English):1st Intl. Workshop on Emerging Memory Solutions
Document Type:Conference Proceeding
Language of publication:English
Publication Date:2016/03/18
Year of Publication:2016
Publishing Institute:Technische Universität Kaiserslautern
Date of the Publication (Server):2016/02/24
Tag:Data retention voltage (DRV); Error correcting coding (ECC); Hamming code; Low leakage; SECDED; SRAM
Number of page:6
Faculties / Organisational entities:Fachbereich Elektrotechnik und Informationstechnik
CCS-Classification (computer science):B. Hardware / B.3 MEMORY STRUCTURES / B.3.0 General
DDC-Cassification:6 Technik, Medizin, angewandte Wissenschaften / 621.3 Elektrontechnik, Elektronik
Collections:International Workshop on Emerging Memory Solutions
Licence (German):Standard gemäß KLUEDO-Leitlinien vom 30.07.2015