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Spin Orbit Torque memory for non-volatile microprocessor caches

  • Magnetic spin-based memory technologies are a promising solution to overcome the incoming limits of microelectronics. Nevertheless, the long write latency and high write energy of these memory technologies compared to SRAM make it difficult to use these for fast microprocessor memories, such as L1- Caches. However, the recent advent of the Spin Orbit Torque (SOT) technology changed the story: indeed, it potentially offers a writing speed comparable to SRAM with a much better density as SRAM and an infinite endurance, paving the way to a new paradigm in processor architectures, with introduction of non- volatility in all the levels of the memory hierarchy towards full normally-off and instant-on processors. This paper presents a full design flow, from device to system, allowing to evaluate the potential of SOT for microprocessor cache memories and very encouraging simulation results using this framework.

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Metadaten
Author:F. Oboril, R. Bishnoi, M. Ebrahimi, M. Tahoori, G. Di Pendina, K. Jabeur, G. Prenat
URN (permanent link):urn:nbn:de:hbz:386-kluedo-43219
Document Type:Conference Proceeding
Language of publication:English
Publication Date:2016/03/18
Year of Publication:2016
Publishing Institute:Technische Universität Kaiserslautern
Date of the Publication (Server):2016/03/14
Tag:Cache; Spin Orbit Torque Memory
Number of page:4
Faculties / Organisational entities:Fachbereich Elektrotechnik und Informationstechnik
CCS-Classification (computer science):B. Hardware / B.3 MEMORY STRUCTURES / B.3.1 Semiconductor Memories (NEW) (B.7.1)
DDC-Cassification:6 Technik, Medizin, angewandte Wissenschaften / 621.3 Elektrontechnik, Elektronik
Collections:International Workshop on Emerging Memory Solutions
Licence (German):Standard gemäß KLUEDO-Leitlinien vom 30.07.2015