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Modification of the exchange bias effect by He ion irradiation

  • FeNi/FeMn exchange bias samples with a large exchange bias field at room temperature have been prepared on a Cu buffer layer. Upon irradiation with He ions, both the exchange bias field and the coercive field are modified. For low ion doses the exchange bias field is enhanced by nearly a factor of 2. Above a threshold dose of 0.3olsi 10 15 ions/cm 2 , the exchange bias field decreases continuously as the ion dose increases. The ob-served modifications are explained in terms of defect creation acting as pinning sites for domain walls and atomic intermixing.

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Author:A Mougin, Tim Mewes, Radek Lopusnik, M. Jung, D. Engel, A. Ehresmann, H. Schmoranzer, J. Fassbender, Burkard Hillebrands
URN (permanent link):urn:nbn:de:hbz:386-kluedo-9431
Document Type:Preprint
Language of publication:English
Year of Completion:2000
Year of Publication:2000
Publishing Institute:Technische Universität Kaiserslautern
Date of the Publication (Server):2000/02/18
Faculties / Organisational entities:Fachbereich Physik
DDC-Cassification:5 Naturwissenschaften und Mathematik / 530 Physik
Licence (German):Standard gemäß KLUEDO-Leitlinien vor dem 27.05.2011