A Numerical Method for Kinetic Semiconductor Equations in the Drift Diffusion limit

  • An asymptotic-induced scheme for kinetic semiconductor equations with the diffusion scaling is developed. The scheme is based on the asymptotic analysis of the kinetic semiconductor equation. It works uniformly for all ranges of mean free paths. The velocity discretization is done using quadrature points equivalent to a moment expansion method. Numerical results for different physical situations are presented.

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Metadaten
Author:Axel Klar
URN (permanent link):urn:nbn:de:hbz:386-kluedo-5926
Serie (Series number):Berichte der Arbeitsgruppe Technomathematik (AGTM Report) (187)
Document Type:Preprint
Language of publication:English
Year of Completion:1997
Year of Publication:1997
Publishing Institute:Technische Universität Kaiserslautern
Tag:asymptotic analysis ; drift-diffusion limit ; kinetic semiconductor equations ; numerical methods for stiff equations
Faculties / Organisational entities:Fachbereich Mathematik
DDC-Cassification:510 Mathematik

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