The Semiconductor Model Hierarchy in Optimal Dopant Profiling

  • We consider optimal design problems for semiconductor devices which are simulated using the energy transport model. We develop a descent algorithm based on the adjoint calculus and present numerical results for a ballistic diode. Further, we compare the optimal doping profile with results computed on basis of the drift diffusion model. Finally, we exploit the model hierarchy and test the space mapping approach, especially the aggressive space mapping algorithm, for the design problem. This yields a significant reduction of numerical costs and programming effort.

Export metadata

  • Export Bibtex
  • Export RIS

Additional Services

Share in Twitter Search Google Scholar
Author:Concetta Drago, Rene Pinnau
URN (permanent link):urn:nbn:de:hbz:386-kluedo-14494
Serie (Series number):Berichte der Arbeitsgruppe Technomathematik (AGTM Report) (269)
Document Type:Preprint
Language of publication:English
Year of Completion:2006
Year of Publication:2006
Publishing Institute:Technische Universität Kaiserslautern
Tag:Optimal semiconductor design ; adjoints ; aggressive space mapping; descent algorithm ; drift diffusion ; energy transport ; numerics
Faculties / Organisational entities:Fachbereich Mathematik
DDC-Cassification:510 Mathematik
MSC-Classification (mathematics):35J50 Variational methods for elliptic systems
49J20 Optimal control problems involving partial differential equations
49K20 Problems involving partial differential equations
90C48 Programming in abstract spaces

$Rev: 12793 $